WNx films prepared by reactive ion-beam sputter deposition
| Autor: | A. Benhocine, G. Gautherin, A. Fourrier, F. Meyer, Alain Bosseboeuf |
|---|---|
| Rok vydání: | 1991 |
| Předmět: |
Auger electron spectroscopy
Materials science Ion beam Silicon Analytical chemistry General Physics and Astronomy chemistry.chemical_element Schottky diode Surfaces and Interfaces General Chemistry Substrate (electronics) Sputter deposition Condensed Matter Physics Surfaces Coatings and Films chemistry Electrical measurements Thin film |
| Zdroj: | Applied Surface Science. 53:353-357 |
| ISSN: | 0169-4332 |
| DOI: | 10.1016/0169-4332(91)90285-r |
| Popis: | WN x thin films (0.5⩽ x ⩽1) were deposited at room temperature on clean silicon substrates by reactive ion-beam sputter deposition in an UHV set-up. Properties such as morphology, microstructure, density, composition, mechanical stress and resistivity have been investigated as functions of ion-beam energy. Thermal stability of very thin films during sequential annealings and Schottky diodes were respectively characterized by in situ Auger electron spectrometry and C(V) measurements. It is demonstrated that a subnitridation of the silicon substrate occurs during the initial growth of the WN x layers. This may explain the absence of silicon out-diffusion up to more than 700°C and some anomalies observed during the electrical measurements of the Schottky diodes. |
| Databáze: | OpenAIRE |
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