Selective MOVPE of semi-insulating InP layers for high speed OEICs

Autor:	A. Nowitzki, Gert Laube, P. Speier, K. Dutting
Rok vydání:	1991
Předmět:	Atmospheric pressure Chemistry business.industry Diffusion Doping Mineralogy Crystal growth Substrate (electronics) Condensed Matter Physics Epitaxy Inorganic Chemistry Materials Chemistry Optoelectronics Metalorganic vapour phase epitaxy Thin film business
Zdroj:	Journal of Crystal Growth. 107:156-160
ISSN:	0022-0248
DOI:	10.1016/0022-0248(91)90449-f
Popis:	MOVPE growth on patterned substrates and doping behaviour of iron in InP were studied at different reactor pressures. The key parameters for a successful control of selective MOVPE like the growth temperature, growth rate, reactor pressure and the ratio of coated to uncoated surface are discussed. Dry and wet chemical etched structures were overgrown to get basic information for designing high speed OEIC structures. For low pressure growth, a reduced Fe incorporation and a drastically lowered diffusion tendency towards the layer/substrate interface was observed by SIMS profiles in contrast to atmospheric pressure growth as well as a strong interaction between zinc and iron regarding diffusion behaviour.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::09cad48ee37a79bc2e46c1a3bb47b764 https://doi.org/10.1016/0022-0248(91)90449-f Zobrazit plný text záznamu