Numerical analysis of high‐voltage RESURF AlGaN/GaN high‐electron‐mobility transistor with graded doping buffer and slant back electrode

Autor: Xingye Zhou, Zhihong Feng, Ziyu Zhao, Chao Zhu, Zhiheng Wei, Ziqi Zhao
Rok vydání: 2019
Předmět:
Zdroj: Micro & Nano Letters. 14:1282-1286
ISSN: 1750-0443
DOI: 10.1049/mnl.2018.5421
Popis: A reduced surface field (RESURF) AlGaN/GaN high-electron-mobility transistor (HEMT) with graded doping buffer (GDB) and slant back electrode (SBE) is proposed. In the GDB, the p-dopant density increases linearly both from top to bottom and right to left. The concentrated negative space charges in the lower-left corner of GDB attract the electric field lines from the channel and barrier towards the gate under OFF-state, which flats the electric field and enhances the breakdown voltage ( V br ). Additionally, the low p-dopant density near the top of GDB achieves the device with low ON-state resistance ( R ON ). The SBE flats the electric field along the channel above it and introduces a peak electric field near its edge. Simulation results show a V br of 2150 V and R ON of 7.05 Ωmm for the proposed device, compared with 1701 V and 7.73 Ωmm for the conventional back electrode RESURF HEMT (BE-RESURF HEMT) with the same gate -drain spacing. Moreover, due to the reduced depletion of 2DEG from the GDB, the proposed device shows slight increases in f T and f max (8.76 and 14.80 GHz), comparing with the conventional BE-RESURF HEMT (8.24 and 13.84 GHz).
Databáze: OpenAIRE
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