Enhanced Aspect Ratio of Focused Ion Beam Nanopatterning Technique in Semiconductors

Autor:	Alex Lahav, Meir Orenstein, Alex Hayat
Rok vydání:	2007
Předmět:	Materials science Ion beam business.industry Semiconductor materials chemistry.chemical_element Nanotechnology Focused ion beam Aspect ratio (image) Ion Semiconductor chemistry business Layer (electronics) Titanium
Zdroj:	2007 Conference on Lasers and Electro-Optics (CLEO).
Popis:	We demonstrate a more than 10 aspect-ratio FIB semiconductor nanopatterning technique. The undesired semiconductor material decomposition by the beam-tail ions is prevented by a protective Ti layer acting as a mask for the semiconductor.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::09ac42095388d4d8fb6d1672755f5493 https://doi.org/10.1109/cleo.2007.4452886 Zobrazit plný text záznamu