Low-temperature nickel-induced nano-crystallization of silicon on PET by MIC, hydrogenation and mechanical stress
| Autor: | Michael Robertson, A. Behnam, Aida Ebrahimi, F. Karbassian, S. Mohajerzadeh |
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| Rok vydání: | 2006 |
| Předmět: |
Electron mobility
Materials science Silicon Strain (chemistry) technology industry and agriculture chemistry.chemical_element Mineralogy Substrate (electronics) equipment and supplies Condensed Matter Physics Electronic Optical and Magnetic Materials law.invention Nickel chemistry law Nano Microscopy Materials Chemistry Electrical and Electronic Engineering Composite material Crystallization |
| Zdroj: | Solid-State Electronics. 50:1618-1624 |
| ISSN: | 0038-1101 |
| DOI: | 10.1016/j.sse.2006.07.013 |
| Popis: | The effects of RF-Plasma hydrogenation and applied mechanical strain on the crystallization of silicon layers deposited on plastic substrates have been investigated where the maximum temperature remained below 170 °C for the entire process. The structural properties of the samples have been studied by optical, scanning-electron and transmission-electron microscopy where the nano-crystallinity of the silicon layers has been confirmed. The maximum average diameter of the silicon grains was 4.5 nm and occurred for an applied tensile strain of 4%. In addition, a thin-film transistor on a plastic substrate has been fabricated and found to possess an electron mobility of 2.4 cm2/V s. |
| Databáze: | OpenAIRE |
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