Feasibility Study of $\hbox{Mo/SiO}_{x}/\hbox{Pt}$ Resistive Random Access Memory in an Inverter Circuit for FPGA Applications

Autor:	Joonmyoung Lee, Jungho Shin, Jubong Park, Byung-Hun Lee, S. Cimino, Seungjae Jung, Sangsu Park, Myungwoo Son, Hyunsang Hwang, Wootae Lee, Seonghyun Kim, L. Pantisano
Rok vydání:	2011
Předmět:	Engineering business.industry Electronic Optical and Magnetic Materials Resistive random-access memory Non-volatile memory CMOS Gate array Power consumption Electronic engineering Inverter Static random-access memory Electrical and Electronic Engineering Field-programmable gate array business
Zdroj:	IEEE Electron Device Letters. 32:1665-1667
ISSN:	0741-3106
Popis:	We proposed a Mo/SiOx/Pt resistive random access memory (RRAM) device as an alternative to static random access memory (SRAM) devices for field-programmable gate array (FPGA) applications. In order to evaluate the feasibility of our RRAM device for FPGA applications, we utilized an RRAM device + inverter structure and confirmed its successful operation under various operational schemes, multilevel operation by controlling bias condition, and immunity against read disturbance and a retention test at high temperature. From the nonvolatile and reliable characteristics of our RRAM device, unlike that of SRAM devices, it holds promise to enable reconfigurable logic applications with significantly reduced logic-gate density and power consumption.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::09a2acf9b077ce321224f1ae27752fb6 https://doi.org/10.1109/led.2011.2168376 Zobrazit plný text záznamu