| Autor: |
Irving Chyr, James Harrison, Terry Towe, Frank Reinhardt, Xu Jin, Hanxuan Li, Touyen Nguyen, Tom Truchan, Yongdan Hu, Trevor Crum, Myra Berube, Denny Brown, Robert L. Miller, Raman Srinivasan, Kiran Kuppuswamy |
| Rok vydání: |
2007 |
| Předmět: |
|
| Zdroj: |
SPIE Proceedings. |
| ISSN: |
0277-786X |
| DOI: |
10.1117/12.701714 |
| Popis: |
Ongoing optimization of epitaxial designs, MOCVD growth processes, and device engineering at Spectra-Physics has yielded significant improvement in both power conversion efficiency (PCE) and reliable power, without compromising manufacturability in a high-volume production environment. Maximum PCE of 72.2% was measured at 25 °C for 976- nm single-emitter devices with 3-mm cavity length. 928 W continuous-wave (CW) output power has been demonstrated from a high-efficiency (65% maximum PCE) single laser bar with 5-mm cavity length and 77% fill factor. Eight-element laser bars (976 nm) with 100mm-wide emitters have been operated at >148 W CW, corresponding to linear power densities at the facet >185 mW/mm. Ongoing life-testing, in combination with stepped stress tests, indicate rates of random failure and wear-out are well below those of earlier device designs. For operation near 800 nm, the design has been optimized for high-power, high-temperature applications. The highest PCE for water-cooled stacks was 54.7% at 35°C coolant temperature. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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