Ferroelectricity in Hf0.5Zr0.5O2 Thin Films: A Microscopic Study of the Polarization Switching Phenomenon and Field-Induced Phase Transformations
| Autor: | Sergei Zarubin, Dmitrii Negrov, Sergey Zakharchenko, Andrei Zenkevich, A. G. Chernikova, Roman V. Kirtaev, Anastasia Chouprik, Pratyush Buragohain, Alexei Gruverman, Maxim Spiridonov |
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| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science Condensed matter physics 02 engineering and technology 021001 nanoscience & nanotechnology Polarization (waves) 01 natural sciences Ferroelectricity law.invention Non-volatile memory Capacitor Piezoresponse force microscopy law Electric field 0103 physical sciences General Materials Science Orthorhombic crystal system Thin film 0210 nano-technology |
| Zdroj: | ACS Applied Materials & Interfaces. 10:8818-8826 |
| ISSN: | 1944-8252 1944-8244 |
| DOI: | 10.1021/acsami.7b17482 |
| Popis: | Because of their full compatibility with the modern Si-based technology, the HfO2-based ferroelectric films have recently emerged as viable candidates for application in nonvolatile memory devices. However, despite significant efforts, the mechanism of the polarization switching in this material is still under debate. In this work, we elucidate the microscopic nature of the polarization switching process in functional Hf0.5Zr0.5O2-based ferroelectric capacitors during its operation. In particular, the static domain structure and its switching dynamics following the application of the external electric field have been monitored with the advanced piezoresponse force microscopy (PFM) technique providing a nm resolution. Separate domains with strong built-in electric field have been found. Piezoresponse mapping of pristine Hf0.5Zr0.5O2 films revealed the mixture of polar phase grains and regions with low piezoresponse as well as the continuum of polarization orientations in the grains of polar orthorhombic ph... |
| Databáze: | OpenAIRE |
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