Synthesis and investigation of oxygen deficiency effect on electric properties of La0.75Ba0.10Sr0.15FeO2.875-δ (δ = 0.00, 0.125 and 0.25) ferrites
Autor: | R. Dhahri, Kamel Khirouni, Benilde F.O. Costa, M. Bouzayen, Slaheddine Chaabouni, A. Benali |
---|---|
Rok vydání: | 2020 |
Předmět: |
010302 applied physics
Materials science Condensed matter physics Relaxation (NMR) Conductivity Condensed Matter Physics Thermal conduction 01 natural sciences Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials symbols.namesake Electrical resistivity and conductivity 0103 physical sciences symbols Electrical measurements Orthorhombic crystal system Grain boundary Electrical and Electronic Engineering Raman spectroscopy |
Zdroj: | Journal of Materials Science: Materials in Electronics. 32:13000-13013 |
ISSN: | 1573-482X 0957-4522 |
DOI: | 10.1007/s10854-020-04379-3 |
Popis: | In the present investigation, La0.75Ba0.10Sr0.15FeO2.875-δ oxygen-deficient ferrites with δ = 0.00, 0.125 and 0.25 were synthesized by sol–gel method. The physical characterization has been carried out by X-ray diffraction, scanning electron microscope SEM, Raman spectroscopy, and complex impedance. All samples are formed in orthorhombic crystal symmetry with Pnma space group. Synthesized compounds have nanocrystallite size of 32–46 nm. Raman spectrum shows the oxygen vacancy effect on the tilt and stretching phonon modes. Electric properties were investigated in the framework of impedance and electric conductivity. The complex impedance was measured over a wide range of temperatures (300–380 K) and frequencies (40 Hz–1 MHz). The electrical measurements indicate semiconductor behavior for the three compositions and emphasize the evidence of contribution of grain boundaries in the transport properties. The ac conductivity curves obey the Jonsher universal power law and are assigned to hopping conduction mechanism. It is found that the values of activation energy, estimated from the conductivity analysis, are in the same order with those deduced from relaxation process. Such result proves that both processes, conduction and relaxation, are related to the same defect. |
Databáze: | OpenAIRE |
Externí odkaz: |