Radical-Assisted Silcore(R)CVD of Si3N4 and SiO2 Nanolaminates

Autor: Peter Zagwijn, Bart Bozon, Ed Oosterlaken, Pamela R. Fischer
Rok vydání: 2007
Předmět:
Zdroj: ECS Transactions. 3:61-65
ISSN: 1938-6737
1938-5862
DOI: 10.1149/1.2721474
Popis: The low temperature generation of Si3N4 and SiO2 films, or nanolaminates of these films, has been developed for LPCVD vertical furnaces. These films use silcore® chemistry to deposit amorphous silicon films that are subsequently converted to silicon nitride or silicon oxide films via exposure to in-situ radicals. The gas composition during the plasma conversion step is critical for determining the final film properties.
Databáze: OpenAIRE