Atomic layer deposition of bismuth oxide using Bi(OCMe2iPr)3 and H2O
| Autor: | Mark Saly, D. Price, Sallie Hose, Dustin Z. Austin, John F. Conley, Derryl Allman |
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| Rok vydání: | 2014 |
| Předmět: |
Materials science
Band gap Analytical chemistry Oxide chemistry.chemical_element Surfaces and Interfaces Condensed Matter Physics Rutherford backscattering spectrometry Surfaces Coatings and Films Bismuth Atomic layer deposition chemistry.chemical_compound chemistry Ellipsometry Deposition (phase transition) Thin film |
| Zdroj: | Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 32:01A113 |
| ISSN: | 1520-8559 0734-2101 |
| DOI: | 10.1116/1.4840835 |
| Popis: | Bismuth oxide thin films were deposited by atomic layer deposition using Bi(OCMe2iPr)3 and H2O at deposition temperatures between 90 and 270 °C on Si3N4, TaN, and TiN substrates. Films were analyzed using spectroscopic ellipsometry, x-ray diffraction, x-ray reflectivity, high-resolution transmission electron microscopy, and Rutherford backscattering spectrometry. Bi2O3 films deposited at 150 °C have a linear growth per cycle of 0.039 nm/cycle, density of 8.3 g/cm3, band gap of approximately 2.9 eV, low carbon content, and show the β phase structure with a (201) preferred crystal orientation. Deposition temperatures above 210 °C and postdeposition anneals caused uneven volumetric expansion, resulting in a decrease in film density, increased interfacial roughness, and degraded optical properties. |
| Databáze: | OpenAIRE |
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