Nondestructive evaluation of alternative substrate quality using glancing-incidence x-ray diffraction and Raman spectroscopy
| Autor: | T. W. Haas, D. H. Tomich, J. D. Busbee, H. J. Haugan, L. Grazulis, Kurt G. Eyink, C. J. Eiting, A. M. Cain |
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| Rok vydání: | 2003 |
| Předmět: |
Materials science
Analytical chemistry Surfaces and Interfaces Substrate (electronics) Condensed Matter Physics Epitaxy Surfaces Coatings and Films symbols.namesake Full width at half maximum Etching (microfabrication) X-ray crystallography symbols Raman spectroscopy Spectroscopy Layer (electronics) |
| Zdroj: | Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 21:110-115 |
| ISSN: | 1520-8559 0734-2101 |
| DOI: | 10.1116/1.1527900 |
| Popis: | Alternate substrate technology holds promise for the growth of high-quality lattice-mismatched epitaxial films. Unfortunately, the technology has been plagued by difficulties in reproducibility of results. Some of this problem resides in a lack of characterization of the thin, twist bonded layer used as the template for subsequent epitaxial growth. In this work, grazing-incidence diffraction (GID) and micro-Raman spectroscopy were used to characterize the alternative substrate prior to growth. The 14- and 50-nm-thin GaAs layers were bonded to (100) GaAs substrates and, subsequently, exposed by standard thinning and etching techniques. The crystalline quality of the thin bonded substrates was studied by GID. The full widths at half maximum (FWHM) of the 004 peaks were used to monitor the optimum bonding condition. The measured FWHM varied from 29 to 601 arc s with smooth surfaces exhibiting the lowest values. The effects of bond pressures on template layers were studied for a series of 50 nm alternative su... |
| Databáze: | OpenAIRE |
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