Electrical Degradation of In Situ SiN/AlGaN/GaN MIS-HEMTs Caused by Dehydrogenation and Trap Effect Under Hot Carrier Stress
| Autor: | Meng Zhang, Xuerui Niu, Xiaohua Ma, Ting-Chang Chang, Fong-Min Ciou, Du Jiale, Bin Hou, Qing Zhu, Yilin Chen, Chong Wang, Yu-Shan Lin, Mei Wu, Kuan-Hsu Chen, Ling Yang, Yue Hao |
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| Rok vydání: | 2021 |
| Předmět: | |
| Zdroj: | IEEE Transactions on Electron Devices. 68:4283-4288 |
| ISSN: | 1557-9646 0018-9383 |
| DOI: | 10.1109/ted.2021.3096929 |
| Popis: | The gate and drain bias dependence of hot electron-induced degradation in GaN-based metal–insulator–semiconductor high electron mobility transistors (MIS-HEMTs) was investigated in this work. Devices exhibit an abnormal increase in peak transconductance ( ${G}_{m}$ ,max) during hot carrier stress (HCS) and a partially quick recovery of that after removing the electrical stress. A physical model is proposed to explain the abnormal electrical characteristics caused by HCS. By using density functional theory (DFT), we calculated the energy for electrons to dehydrogenate preexisting [NGaH3]−1 complexes in GaN layer during stress. The dehydrogenation of defects affects the Gm,max of devices. Meanwhile, the neutralization of donor traps in AlGaN barrier layer also plays a significant role in the increase of Gm,max and the detrapping effect of electrons from these traps after removing the electrical stress accounts for the partially quick recovery of ${G}_{m, \text{max}}$ . |
| Databáze: | OpenAIRE |
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