Effects of Al additives on growth of GaN polycrystals by the Na flux method
| Autor: | Hiroki Imabayashi, Mihoko Maruyama, Mamoru Imade, Masayuki Imanishi, Masatomo Honjo, Masashi Yoshimura, Kosuke Murakami, Daisuke Matsuo, Yusuke Mori |
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| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Detection limit Flux method Materials science Al content Organic Chemistry Analytical chemistry Nucleation Flux Crystal growth 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Inorganic Chemistry Secondary Ion Mass Spectroscopy Crystal Crystallography 0103 physical sciences Electrical and Electronic Engineering Physical and Theoretical Chemistry 0210 nano-technology Spectroscopy |
| Zdroj: | Optical Materials. 65:42-45 |
| ISSN: | 0925-3467 |
| Popis: | In this study, we investigated the growth of GaN polycrystals using the Al-added Na flux method. We studied the effects of Al on accelerating the nucleation and purity of GaN polycrystals. The yields of GaN crystals grown in Al-added Na flux were dramatically increased from those in Al-free Na flux, and the polycrystals grown by the Al-added Na flux method were highly transparent. As observed in secondary ion mass spectroscopy measurements, the Al content of the polycrystals was below the detection limit of 3 × 1016 atoms/cm3. From these results, the Al-added Na flux method is found to be appropriate for fabricating a large amount of GaN polycrystals without deteriorating the crystal quality. |
| Databáze: | OpenAIRE |
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