Pentacene organic field-effect transistors with doped electrode-semiconductor contacts
| Autor: | Tissa Sajoto, Stephen Barlow, Bernard Kippelen, William J. Potscavage, Shree Prakash Tiwari, Seth R. Marder |
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| Rok vydání: | 2010 |
| Předmět: |
Organic field-effect transistor
Materials science business.industry Contact resistance Doping General Chemistry Condensed Matter Physics Electronic Optical and Magnetic Materials Biomaterials Pentacene Organic semiconductor chemistry.chemical_compound Semiconductor chemistry Electrode Materials Chemistry Optoelectronics Field-effect transistor Electrical and Electronic Engineering business |
| Zdroj: | Organic Electronics. 11:860-863 |
| ISSN: | 1566-1199 |
| DOI: | 10.1016/j.orgel.2010.01.029 |
| Popis: | The contact resistance in pentacene organic field-effect transistors (OFETs) is found to be significantly reduced by selectively doping the organic semiconductor region beneath the source/drain electrodes. A 10 nm co-evaporated (1:1 ratio) layer of molybdenum tris-[1,2-bis(trifluoromethyl)ethane-1,2-dithiolene] and pentacene was deposited under the metal electrodes for this purpose. The width-normalized contact resistance (varying channel lengths of 25–200 μm used for the study) in contact-doped devices was lowered significantly (0.5 kΩ-cm) in comparison to reference devices (3.4 kΩ-cm) in the accumulation regime (VGS = −30 V). Doping of the contacts did not affect the stability of the devices under continuous bias stress significantly. |
| Databáze: | OpenAIRE |
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