Characteristics of AlN growth on vicinal SiC(0001) substrates by molecular beam epitaxy

Autor:	D. Le Si Dang, J. Brault, Edith Bellet-Amalric, Satoru Tanaka, F. Enjalbert, Jean-Luc Rouvière, E. Sarigiannidou, Guy Feuillet, Bruno Daudin
Rok vydání:	2003
Předmět:	Diffraction Crystallography Reflection (mathematics) Reflection high-energy electron diffraction Materials science Electron diffraction Substrate (electronics) Condensed Matter Physics Vicinal Electronic Optical and Magnetic Materials Hillock Molecular beam epitaxy
Zdroj:	physica status solidi (b). 240:314-317
ISSN:	1521-3951 0370-1972
Popis:	We present the growth of AlN films on vicinal substrates of SiC(0001). The layers were grown by plasma-assisted molecular beam epitaxy (PAMBE) and examined in-situ using reflection high-energy electron diffraction (RHEED). Morphological and structural properties were characterized by atomic force microscopy (AFM) and High Resolution X-Ray Diffraction (HRXRD), respectively. The obtained results by AFM show two main differences with AlN films grown on nominally flat SiC substrates: a) the absence of spiral growth hillocks, and b) the formation of predominantly straight steps. HRXRD measurements on misoriented substrate rocking curves have revealed good structural quality of AlN films (tilt and twist), as well as a disorientation of the c-planes of the AlN with respect to the substrate.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::08fffb5bb45cde6315d5005947a938ad https://doi.org/10.1002/pssb.200303268 Zobrazit plný text záznamu Plný text