Improved 1/f Noise Characteristics in Locally Strained Si CMOS Using Hydrogen-Controlled Stress Liners and Embedded SiGe

Autor:	Hyun-Woo Lee, Tetsuji Ueno, Ho Lee, Heungsik Park, Cheol Kyu Lee, Hyunkyu Cho, Geum-Jong Bae, Hwa-Sung Rhee, Youn Hwa Jung, Nae-In Lee, Hion Suck Baik, Myung Sun Kim
Rok vydání:	2006
Předmět:	Materials science Hydrogen business.industry Scattering chemistry.chemical_element Noise (electronics) PMOS logic Stress (mechanics) Compressive strength CMOS chemistry Electronic engineering Optoelectronics business NMOS logic
Zdroj:	2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers..
DOI:	10.1109/vlsit.2006.1705238
Popis:	This paper reports the first experimental demonstration of improved 1/f noise characteristics in a locally strained Si MOS through hydrogen-controlled stress liners and embedded SiGe (eSiGe). For NMOS, the high hydrogen density (1times1022cm-3) in the stress liner results in three times more noise than that of PMOS. For PMOS, eSiGe proves to be superior to a compressive stress liner in noise due to the low hydrogen density in the system. The controlled stress does not generate interface states or other scattering centers, which increase noise, and only improves 1/f noise due to carrier mass reduction
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::08f4c034dc52a318e94af7f286cd0f08 https://doi.org/10.1109/vlsit.2006.1705238 Zobrazit plný text záznamu