Using intrinsic gallium arsenide oxide for insulating active elements in GaAs-based integrated circuits

Autor:	A. P. Bibilashvili, N. G. Lezhava, A. B. Gerasimov
Rok vydání:	2005
Předmět:	Materials science Physics and Astronomy (miscellaneous) business.industry Anodizing Oxide chemistry.chemical_element Field strength Substrate (electronics) Integrated circuit Gallium arsenide law.invention chemistry.chemical_compound chemistry law Optoelectronics Thermal stability Gallium business
Zdroj:	Technical Physics Letters. 31:75-76
ISSN:	1090-6533 1063-7850
DOI:	10.1134/1.1859506
Popis:	A new method for insulating the active elements of GaAs-based integrated circuits (ICs) is proposed, which is based on the use of intrinsic gallium arsenide oxide formed by plasma anodizing assisted with UV irradiation. This insulation provides a significant decrease in the level of leak currents and the parasitic substrate feedback, ensures an increase in the thermal stability and breakdown field strength, and is adapted to planar IC technology.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::08ee261ad0fcf9734221b25fca218377 https://doi.org/10.1134/1.1859506 Zobrazit plný text záznamu Plný text ve formátu PDF