Abnormal room-temperature oxidation of silicon in the presence of copper

Autor:	Kenichi Takeda, Kenji Hinode, Seiichi Kondo
Rok vydání:	2002
Předmět:	Materials science Solid-state physics Silicon Metallurgy Oxide Analytical chemistry chemistry.chemical_element Surfaces and Interfaces Condensed Matter Physics Copper Oxygen Surfaces Coatings and Films chemistry.chemical_compound chemistry Transmission electron microscopy Silicide Atom
Zdroj:	Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 20:1653-1658
ISSN:	1520-8559 0734-2101
Popis:	The room-temperature reaction between copper (Cu) and silicon (Si) was investigated. The areas of an Si substrate covered with very thin or island-like Cu oxidized formed thick (>100 nm) oxide (SiO2). The areas covered with thick and nonisland-like Cu film did not. These unoxidized areas transformed into SiO2 when the side surfaces of the sample were exposed to air after sectioning for transmission electron microscope observation. The supply of oxygen was found to control this oxidation process. The presence of a Cu silicide, such as Cu3Si, was found to not necessarily be needed for oxidation. The oxidation rate estimated from observation was about 150 nm/month. Copper atoms were detected at the SiO2/Si interface and identified not as silicides but as body-center-cubic-structured Cu several atom layers thick.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::08da8fd553b04d728e34fa3c6da143a4 https://doi.org/10.1116/1.1497179 Zobrazit plný text záznamu