| Autor: |
R.L. John, T.S.D. Cheung, D.L. Harame |
| Rok vydání: |
2005 |
| Předmět: |
|
| Zdroj: |
ISSCC. 2005 IEEE International Digest of Technical Papers. Solid-State Circuits Conference, 2005.. |
| DOI: |
10.1109/isscc.2005.1494103 |
| Popis: |
A 3-stage 21 to 26GHz SiGe PA with 21dBm output power is presented. Small-signal gain is approximately 20dB and reverse isolation is 12.5%. On-chip transformers are extensively used to efficiently couple common-base stages and I/O to source and load, respectively. The 2.45/spl times/2.45mm/sup 2/ chip is fabricated in a 0.18/spl mu/m SiGe BiCMOS process (f/sub T/=100GHz) and draws 450mA from a 1.8V supply. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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