| Autor: |
G. Mauguen, A. Faes, T. Flahaut, Frank Fournel, V. Balan, F. Servant, E. Lagoutte, C. Dubarry, M. Scannell, A. Jouve, K. Rohracher, E. Bourjot, T. Bodner, R. Crochemore, Jens Hofrichter |
| Rok vydání: |
2020 |
| Předmět: |
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| Zdroj: |
2020 IEEE 70th Electronic Components and Technology Conference (ECTC). |
| DOI: |
10.1109/ectc32862.2020.00044 |
| Popis: |
Current 3D integrated devices based on copper hybrid bonding are only integrating dual-damascene CMOS processes for interconnection.. In this study, we have developed a Titanium/Oxide (Ti/SiO 2 ) hybrid bonding technology suitable for 200 mm non-copper technology platforms featuring aluminum back-ends. A combination of material stack, CMP parameters and design rules enabled us to obtain defect-free bond interface across the wafer. Scanning acoustic microscopy, FIB-SEM and TEM cross-sections demonstrated a perfect SiO 2 /SiO 2 bonding as well as excellent Ti/Ti connections for Ti pads as small as 3×3 µm2. Moreover, we designed an electrical test vehicle including a Ti/SiO 2 hybrid-bonding interface, with W vias and AlCu metal interconnects. Despite the integration stack, the bonding interface remains defect-free with contact pads ranging from 10×10 µm2 down to 3×3 µm2. The 3D interconnect showed a contact resistance of 1 Ω and a parasitic capacitance of less than 2 fF. Finally, we report on the process reliability by means of thermal cycling and high-temperature storage, which confirmed the robustness of this innovative Ti/SiO 2 fine pitch interconnection. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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