Compensation of Power Amplifier Long-Term Memory Behavior for Pulsed Radar Applications
| Autor: | Pedro M. Tome, Telmo R. Cunha, Filipe M. Barradas, Jose C. Pedro |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
Radiation
Materials science Amplifier 020206 networking & telecommunications 02 engineering and technology High-electron-mobility transistor Condensed Matter Physics Signal Compensation (engineering) law.invention law Logic gate 0202 electrical engineering electronic engineering information engineering Electronic engineering Radio frequency Electrical and Electronic Engineering Radar Voltage |
| Zdroj: | IEEE Transactions on Microwave Theory and Techniques. 67:5249-5256 |
| ISSN: | 1557-9670 0018-9480 |
| DOI: | 10.1109/tmtt.2019.2940185 |
| Popis: | Pulsed radar amplifiers are known to present severe long-term memory effects in their pulse-to-pulse stability. These are usually attributed to electrothermal dynamics or to trapping effects originated in gallium-nitride (GaN) HEMTs. Expanding on our previous work where we devised a method for determining a suitable dynamic variation in the HEMT’s gate–source voltage for compensating these long-term memory effects in single-ended amplifiers, in this article, we present a feed-forward model to calculate this compensation signal in real-time pulsed radar applications. |
| Databáze: | OpenAIRE |
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