Autor:	Luis Figueroa, Chi-Shain Hong, Richard J. Fu
Rok vydání:	1992
Předmět:	Materials science business.industry Quantum point contact Laser Gallium arsenide law.invention chemistry.chemical_compound Reliability (semiconductor) chemistry Quantum dot laser law Optoelectronics Quantum efficiency business Indium gallium arsenide Quantum well
Zdroj:	Laser Diode Technology and Applications IV.
ISSN:	0277-786X
DOI:	10.1117/12.59166
Popis:	InGaAs/GaAs strained-layer quantum well lasers have been successfully demonstrated for very high temperature CW operation up to 200 C. The lasers show promising reliability data at 70 C, 100 C, and 125 C and high output power of about 300 mW with a 3-micron ridge-waveguide structure.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::08cb21f048b833f356f88961b8e4631f https://doi.org/10.1117/12.59166 Zobrazit plný text záznamu