Hillock‐free integrated‐circuit metallizations by Al/Al‐O layering
| Autor: | T. J. Faith |
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| Rok vydání: | 1981 |
| Předmět: | |
| Zdroj: | Journal of Applied Physics. 52:4630-4639 |
| ISSN: | 1089-7550 0021-8979 |
| DOI: | 10.1063/1.329343 |
| Popis: | Hillocks which grow on aluminum integrated‐circuit films during the contact alloying process present processing and reliablity problems. Layered Al/Al‐O films, deposited by periodically introducing controlled amounts of oxygen into the aluminum‐deposition chamber, are shown to provide dramatic improvements in post‐anneal film‐surface topography. Aluminum films, unlayered Al‐O films, and layered Al/Al‐O films were deposited on thermally‐oxidized silicon wafers in an e‐beam system to thicknesses of approximately 1 μm at a rate of 25 A/s. The films were photolithographically patterned into arrays of 100×100‐μm bond pads and 7‐μm lines, and annealed in forming gas for 20 min at 530 °C. After these anneals, both aluminum films and unlayered Al‐O films with oxygen concentrations less than approximately 6 at.% had surface protrusions (hillocks and/or whiskers) approximately 1 μm in height. Protrusion density was on the order of 105 cm−2. Al‐O films with oxygen concentrations greater than 6 at.% displayed blister... |
| Databáze: | OpenAIRE |
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