Nb-Ti/Al/Ni/Au based ohmic contacts to AlGaN/GaN
| Autor: | Ž. Mozolová, Peter Vogrinčič, Ivan Kostic, Frantisek Uherek, Š. Haščík, Tibor Lalinský, Andrej Vincze, Gabriel Vanko, Jozef Liday |
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| Rok vydání: | 2007 |
| Předmět: |
Auger electron spectroscopy
Materials science Niobium Analytical chemistry chemistry.chemical_element Heterojunction Condensed Matter Physics Surfaces Coatings and Films Barrier layer chemistry Electrical resistivity and conductivity Instrumentation Ohmic contact Layer (electronics) Deposition (law) |
| Zdroj: | Vacuum. 82:193-196 |
| ISSN: | 0042-207X |
| DOI: | 10.1016/j.vacuum.2007.07.020 |
| Popis: | In this paper, we report on a novel Nb-Ti/Al/Ni/Au metallic system proposed to form ohmic contact to AlGaN/GaN heterostructure. The metallic system uses deposition of thin niobium layer as the first layer in contact with the AlGaN barrier layer before deposition of the conventional Ti/Al/Ni/Au metallic system. The fabrication and electrical characterization of the Nb-Ti/Al/Ni/Au based ohmic contacts are presented. We have shown that Nb-based ohmic contacts at optimal alloying temperatures seem to be superior to that of conventional Ti/Al/Ni/Au in both surface morphology and contact resistivity evaluation. Auger Electron Spectroscopy (AES) and Secondary Ion Mass Spectroscopy (SIMS) are also used to evaluate the improved ohmic contact formation. |
| Databáze: | OpenAIRE |
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