MBE growth of ultrathin III–V nanowires on a highly mismatched SiC/Si(111) substrate
| Autor: | K. P. Kotlyar, A. V. Osipov, I. V. Shtrom, I. P. Soshnikov, G. E. Cirlin, S. A. Kukushkin, Rodion R. Reznik |
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| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Photoluminescence Materials science Silicon business.industry Nanowire chemistry.chemical_element 02 engineering and technology Substrate (electronics) 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials chemistry.chemical_compound chemistry Quantum dot 0103 physical sciences Silicon carbide Optoelectronics Nanometre 0210 nano-technology business Layer (electronics) |
| Zdroj: | Semiconductors. 51:1472-1476 |
| ISSN: | 1090-6479 1063-7826 |
| DOI: | 10.1134/s1063782617110252 |
| Popis: | The possibility in principle of growing III–V GaAs, AlGaAs, and InAs nanowires (NWs) on a silicon substrate with a nanometer buffer layer of silicon carbide is demonstrated for the first time. The diameter of these NWs is smaller than that of similar NWs grown on a silicon substrate. In particular, the minimum diameter is less than 10 nm for InAs NWs. In addition, it was assumed on the basis of photoluminescence measurements that, when AlGaAs NWs are grown on these substrates, a complex structure is formed due to the self-organized formation of AlGaAs quantum dots with a lower content of aluminum, embedded in the NWs. |
| Databáze: | OpenAIRE |
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