Two-step approach for the growth of Cu0.5Ag0.5InSe2 thin films

Autor:	G. Hema Chandra, R. Prasada Rao, Y.P. Venkata Subbaiah, Mukul Gupta, Shaik Babujani
Rok vydání:	2021
Předmět:	Materials science Chemical engineering Two step Substrate (electronics) Electrical and Electronic Engineering Thin film Atomic and Molecular Physics and Optics Deposition (law) Electronic Optical and Magnetic Materials
Zdroj:	Optik. 248:168203
ISSN:	0030-4026
DOI:	10.1016/j.ijleo.2021.168203
Popis:	In this work a facile two-step process, comprising of e-beam evaporated precursor deposition of (In/Cu/Ag/Se)× 3 multi-stack over substrate followed by additional selenization treatment, has been used to grow high-quality Cu0.5Ag0.5InSe2 (CAISe) films. The post selenization was performed at distinct temperatures in the range, 300 °C - 500 °C, and the effect of selenization temperature on the growth of CAISe thin films was reported in detail. The post selenization of (In/Cu/Ag/Se)×3 precursors at temperatures
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::08bd6460010a1d3fb0bb7cfbc05f1441 https://doi.org/10.1016/j.ijleo.2021.168203 Zobrazit plný text záznamu Full Text from ScienceDirect