Modifications of the structure and electrical parameters of the films of amorphous hydrogenated silicon implanted with Si+ ions
| Autor: | O. A. Golikova, I. N. Petrov, A. N. Kuznetsov, V. A. Terekhov, V. Kh. Kudoyarova, E. P. Domashevskaya |
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| Rok vydání: | 2000 |
| Předmět: |
Materials science
Silicon Photoconductivity Analytical chemistry chemistry.chemical_element Dark conductivity Condensed Matter Physics Microstructure Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Amorphous solid Ion chemistry Emission spectrum Hydrogen concentration Atomic physics |
| Zdroj: | Semiconductors. 34:87-91 |
| ISSN: | 1090-6479 1063-7826 |
| DOI: | 10.1134/1.1187951 |
| Popis: | The influence of implantation of Si+ ions with energies of 30, 60, and 120 keV was studied on the dark conductivity, photoconductivity, hydrogen concentration, microstructure parameter, and special features of the ultrasoft X-ray emission spectra of a-Si:H films that were deposited at Ts=300°C by the dc-MASD and rf-PECVD methods and that differed in initial structural characteristics. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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