Formulae for secondary electron yield from insulators and semiconductors
| Autor: | Ai-Gen Xie, Yu-Qing Xia, Min Lai, Yu-Lin Chen |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Nuclear and High Energy Physics Yield (engineering) Materials science business.industry Astrophysics::High Energy Astrophysical Phenomena 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Secondary electrons Semiconductor Nuclear Energy and Engineering Secondary emission 0103 physical sciences Incident energy Atomic physics 0210 nano-technology business |
| Zdroj: | Nuclear Science and Techniques. 28 |
| ISSN: | 2210-3147 1001-8042 |
| DOI: | 10.1007/s41365-017-0291-y |
| Popis: | The processes and characteristics of secondary electron emission in insulators and semiconductors were studied, and the formulae for the maximum yield (δ m) at W p0m ≤ 800 eV and the secondary electron yield from insulators and semiconductors δ at the primary incident energy of 2 keV ≤ W p0 |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full text from SpringerLink