Electrical Piezoeffect in Semiconducting BiSb Alloys due to Anisotropy of Electron Mobility

Autor:	R. Tolutis
Rok vydání:	1994
Předmět:	Compressive deformation Electron mobility Materials science Condensed matter physics Scattering Ultimate tensile strength Repopulation Electron Condensed Matter Physics Anisotropy Electronic Optical and Magnetic Materials Magnetic field
Zdroj:	physica status solidi (b). 185:439-446
ISSN:	1521-3951 0370-1972
DOI:	10.1002/pssb.2221850214
Popis:	The strong electrical piezoeffect caused by the deformation induced anisotropy of electron mobility in Bi1−xSbx semiconducting samples is described. Attention is drawn to the piezoeffect voltage, high in undoped samples, its nonsymmetric change under tensile and compressive deformation, and its sign inversion at small magnetic fields. All these effects are explained in terms of electron intervalley repopulation and scattering. Possible applications are discussed. [Russian Text Ignored]
Databáze:	OpenAIRE
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