Silicon passivated by two-layer insulating films of ytterbium oxide and dysprosium oxide
| Autor: | V. A. Rozhkov, M. A. Rodionov, A. V. Pashin |
|---|---|
| Rok vydání: | 2004 |
| Předmět: |
Materials science
Physics and Astronomy (miscellaneous) Silicon business.industry Photoconductivity Oxide chemistry.chemical_element Semiconductor device engineering.material chemistry.chemical_compound chemistry Coating Dysprosium engineering Optoelectronics Charge carrier business Deposition (law) |
| Zdroj: | Technical Physics Letters. 30:512-514 |
| ISSN: | 1090-6533 1063-7850 |
| Popis: | We have studied the recombination properties of silicon passivated by two-layer insulating films of ytterbium oxide and dysprosium oxide. After deposition of such a two-layer coating of rare earth element (REE) oxides, the effective lifetime of nonequilibrium charge carriers, measured by the method of nonstationary photoconductivity relaxation, is two to three times the initial value. The rates of the surface recombination of charge carriers at the silicon-REE oxide interface have been determined. Two-layer insulating films of REE oxides are promising passivating coatings for semiconductor devices and integrations. |
| Databáze: | OpenAIRE |
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