Strained layer In/sub x/Ga/sub 1-x/As/GaAs and In/sub x/Ga/sub 1-x/As/In/sub y/Ga/sub 1-y/P multiple quantum well optical modulators grown by gas-source MBE

Autor:	L.M. Woods, C.W. Chen, T.J. Vogt, D.L. Lile, G.Y. Robinson, J.W. Kim
Rok vydání:	2002
Předmět:	Materials science business.industry Photoconductivity Gallium arsenide chemistry.chemical_compound Wavelength Optical modulator Reflection (mathematics) chemistry Modulation Optoelectronics business Molecular beam epitaxy Diode
Zdroj:	1993 (5th) International Conference on Indium Phosphide and Related Materials.
DOI:	10.1109/iciprm.1993.380619
Popis:	The first results on low power positive-intrinsic-negative (PIN) diode modulator structures using strained molecular beam epitaxy (MBE) on GaAs are presented. A comparison of transmission, reflection and photocurrent spectra for these nonresonant devices, with those fabricated from InGaAs/GaAs indicates larger modulation with a maximum change in reflection of >42% being observed at 5 V bias at a wavelength of 0.06 /spl mu/m. >
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::08a6c6f15a25e70f61ac059c239362fa https://doi.org/10.1109/iciprm.1993.380619 Zobrazit plný text záznamu