Impurities in InP grown by MOVPE using a new precursor Et2InNMe2: photoluminescence and Hall study
| Autor: | M.L. Favaro, David Ajò, F. De Zuane, P. Zanella, G. Rossetto, A. Camporese, G. Torzo |
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| Rok vydání: | 1994 |
| Předmět: |
Photoluminescence
Materials science Mechanical Engineering Inorganic chemistry Analytical chemistry chemistry.chemical_element Chemical vapor deposition Condensed Matter Physics Epitaxy chemistry.chemical_compound chemistry Mechanics of Materials Impurity Indium phosphide General Materials Science Metalorganic vapour phase epitaxy Thin film Indium |
| Zdroj: | Materials Science and Engineering: B. 28:224-227 |
| ISSN: | 0921-5107 |
| DOI: | 10.1016/0921-5107(94)90052-3 |
| Popis: | Epitaxial layers of n-type InP have been grown by metal organic vapor phase epitaxy at different growth temperatures and V/III ratios using a new indium precursor and characterized mainly by photoluminescence and Hall measurements. Their electrical and optical properties are encouraging, although they are not as good as those of the layers grown with conventional precursors. Samples grown in different conditions exhibit quite different properties. In particular, incorporation of Mg and Zn at higher and lower growth temperature, respectively, is shown by photoluminescence spectra recorded at liquid-helium temperature. |
| Databáze: | OpenAIRE |
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