A Q-band low phase noise monolithic AlGaN/GaN HEMT VCO
| Autor: | Robert Coffie, M. Truong, Mike Wojtowicz, Ioulia Smorchkova, Flavia S. Fong, R. Tsai, Thomas Wong, A. Oki, Xing Lan, Ben Heying, Mark Kintis, C. Namba |
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| Rok vydání: | 2006 |
| Předmět: |
Engineering
business.industry Electrical engineering Wide-bandgap semiconductor Gallium nitride High-electron-mobility transistor Integrated circuit Condensed Matter Physics law.invention chemistry.chemical_compound Voltage-controlled oscillator Q band chemistry law Phase noise Hardware_INTEGRATEDCIRCUITS Optoelectronics Electrical and Electronic Engineering business Monolithic microwave integrated circuit |
| Zdroj: | IEEE Microwave and Wireless Components Letters. 16:425-427 |
| ISSN: | 1531-1309 |
| DOI: | 10.1109/lmwc.2006.877128 |
| Popis: | A Q-band 40-GHz GaN monolithic microwave integrated circuit voltage controlled oscillator (VCO) based on AlGaN/GaN high electron mobility transistor technology has been demonstrated. The GaN VCO delivered an output power of +25dBm with phase noise of -92dBc/Hz at 100-KHz offset, and -120dBc/Hz at 1-MHz offset. To the best of our knowledge, this represents the state-of-the-art for GaN VCOs in terms of frequency, output power, and phase noise performance. This work demonstrates the potential for the use of GaN technology for high frequency, high power, and low phase noise frequency sources for military and commercial applications |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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