Resonant Raman scattering and photoluminescence from high-quality nanocrystalline ZnO thin films prepared by thermal oxidation of ZnS thin films
| Autor: | W. Xu, X.T. Zhang, Z Z Zhi, Y.M. Lu, D.Z. Shen, J. Y. Zhang, G Z Zhong, X G Kong, X.W. Fan, Y.C. Liu |
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| Rok vydání: | 2001 |
| Předmět: |
Thermal oxidation
Materials science Photoluminescence Acoustics and Ultrasonics Condensed Matter::Other business.industry Chemical vapor deposition Condensed Matter Physics Nanocrystalline material Surfaces Coatings and Films Electronic Optical and Magnetic Materials Condensed Matter::Materials Science symbols.namesake Optics Condensed Matter::Superconductivity symbols Optoelectronics Thin film business Raman spectroscopy Raman scattering Wurtzite crystal structure |
| Zdroj: | Journal of Physics D: Applied Physics. 34:3430-3433 |
| ISSN: | 1361-6463 0022-3727 |
| DOI: | 10.1088/0022-3727/34/24/302 |
| Popis: | In this paper, we report photoluminescence (PL) from high-quality nanocrystalline ZnO thin films. The high-quality nanocrystalline ZnO thin films are prepared by thermal oxidation of ZnS films deposited by low-pressure metal organic chemical vapour deposition technique. X-ray diffraction indicates nanocrystalline ZnO thin films with a polycrystalline hexagonal wurtzite structure. The Raman spectrum shows a typical resonant multi-phonon process within the ZnO film. A strong ultraviolet emission peak at 380 nm is observed and the deep-level emission band is barely observable at room temperature. The strength (ΓLO) of the exciton-longitudinal-optical (LO)-phonon coupling is deduced from the temperature dependence of the full width at half maximum of the fundamental excitonic peak. ΓLO is largely reduced due to the quantum confinement effect. The origin of the luminescence is discussed with the help of PL spectra. |
| Databáze: | OpenAIRE |
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