Optical properties of size quantized PbSe films chemically deposited on GaAs
| Autor: | Amir Sa'ar, Zs. J. Horváth, János Makai, Michael Shandalov, Janos Balazs, Nadav Gutman, Yuval Golan |
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| Rok vydání: | 2007 |
| Předmět: |
Materials science
Photoluminescence business.industry Band gap Condensed Matter Physics Microstructure Nanocrystalline material Electronic Optical and Magnetic Materials Crystal Monocrystalline silicon Optics Nanocrystal Optoelectronics business Absorption (electromagnetic radiation) Instrumentation |
| Zdroj: | The European Physical Journal Applied Physics. 41:75-80 |
| ISSN: | 1286-0050 1286-0042 |
| DOI: | 10.1051/epjap:2007172 |
| Popis: | PbSe films were chemically deposited with a range of controlled microstructures, from nanocrystalline to monocrystalline films. The crystal size in the nanocrystalline films was controlled in a range 7 to 25 nm with a fairly narrow size distribution, which allowed fine-tuning of the PbSe energy gap. The optical properties of the films were investigated using infrared (IR) transmission and IR photoluminescence measurements. The nanocrystalline PbSe films showed single bandgap values in the technologically important near-IR region. Two bandgap values, corresponding to both bulk and confined nanocrystals, were obtained for films with mixed microstructure. Strong blue shifts in both the absorption and emission peaks of the nanocrystalline layers were obtained. The bandgaps of the PbSe films were found to be in good agreement with theoretical calculations. The results point out the potential of these films for nanoscale optical device applications operating in the near-IR range. |
| Databáze: | OpenAIRE |
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