Stress induced one‐dimensional model for current oscillations at the Si/electrolyte contact

Autor:	Thilo Notz, H. J. Lewerenz, J. Grzanna
Rok vydání:	2009
Předmět:	Condensed matter physics Silicon Etching rate Stress induced Oxide chemistry.chemical_element Nanotechnology Electrolyte Condensed Matter Physics Stress (mechanics) chemistry.chemical_compound chemistry Sustained oscillations Current (fluid)
Zdroj:	physica status solidi c. 6:1639-1643
ISSN:	1610-1642 1862-6351
DOI:	10.1002/pssc.200881028
Popis:	A cellular automata is introduced to model the locally resolved oxide thickness, the stress, and the etching rate dynamics at the silicon electrolyte contact along a macroscopically long line (1 mm). Short- and long-range interaction mechanisms are considered to achieve current oscillations. Extended chronoamperometric oscillations are obtained but finally, the oscillations become increasingly damped for the case of a locally acting stress and a locally varying etching rate. The additional incorporation of a small oscillating and long-range interacting nominal etching rate into the model leads to sustained oscillations. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::08790198e13f40aa55a6800e70f639c2 https://doi.org/10.1002/pssc.200881028 Zobrazit plný text záznamu Plný text