Research on Contamination-Resistant SiO2 Optical Thin Films in a Vacuum Environment
| Autor: | Jianliang Qiao, Shengzhao Wang, Xin-feng Guo, Chunjuan Nan |
|---|---|
| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Materials science genetic structures General Physics and Astronomy Infrared spectroscopy chemistry.chemical_element 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences eye diseases Contact angle X-ray photoelectron spectroscopy chemistry 0103 physical sciences Transmittance Fluorine Surface modification sense organs Thin film Composite material 0210 nano-technology Sol-gel |
| Zdroj: | Journal of the Korean Physical Society. 77:67-71 |
| ISSN: | 1976-8524 0374-4884 |
| DOI: | 10.3938/jkps.77.67 |
| Popis: | The Contamination resistance of SiO2 optical films prepared by using sol-gel method was investigated and improved in this research. FDTS (1H, 1H, 2H, 2H-perfluorodecyltrichlorosilane) was used to modify SiO2 thin films. Fourier Transform Infrared Spectrometer (FT-IR) and X-ray photoelectron spectroscopy (XPS) were used to evaluate the components on surface of the SiO2 thin films. The optical properties and hydrophobicity were also measured. The results show that the SiO2 thin film modification with FDTS causes −OH groups to be replaced by organic groups containing fluorine. The transmittance peak of SiO2 thin film changes, and the surface contact angle of water droplets on the SiO2 film increases from 35° to 107° after surface modification with FTDS. After the SiO2 thin films had been put in a vacuum environment for 24 hours, the peak transmittance of the modified SiO2 film under the same conditions is reduced to 0.14%, which is less than 3.17% of the unmodified film. The peak transmittance of the modified SiO2 thin films is also improved. |
| Databáze: | OpenAIRE |
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