Preparation in situ of YBCO films by opposed-targets sputtering
| Autor: | Vera M. Fartushnaya, Yurij E. Grigorashvily, Alexey A. Fomin, Igor L. Sotnikov |
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| Rok vydání: | 1991 |
| Předmět: |
Materials science
Analytical chemistry Energy Engineering and Power Technology Substrate (electronics) Crystal structure Sputter deposition Condensed Matter Physics Epitaxy Electronic Optical and Magnetic Materials Ion Sputtering Electrical and Electronic Engineering Layer (electronics) Yttria-stabilized zirconia |
| Zdroj: | Physica C: Superconductivity. :1951-1952 |
| ISSN: | 0921-4534 |
| Popis: | Epitaxial YBCO films were in situ grown by the opposed-targets sputtering (OTS) method. The temperature T s was varied in range 700–890°C, optimum containing of O 2 gas in Ar/O 2 sputtering mixture was 5–10%. Substrates of SrTiO 3 and Al 2 O 3 with buffer YSZ layer were used. Epitaxial YSZ layers were grown by rf magnetron sputtering. Optimum conditions were T s =800–900°C and blase substrate potential V SB =(-1)—(-15)V. It was found that the bombardment of growing layer by Ar + ions with small energy improved its crystal structure. YBCO films had T CE =87–89K and J C =2×10 6 K at 77K. |
| Databáze: | OpenAIRE |
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