| Autor: |
Chia Ying Yen, Cheng Chuan Wang |
| Rok vydání: |
2013 |
| Předmět: |
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| Zdroj: |
Applied Mechanics and Materials. :40-44 |
| ISSN: |
1662-7482 |
| DOI: |
10.4028/www.scientific.net/amm.479-480.40 |
| Popis: |
In this work, GZO thin films were prepared by sol-gel process and spin coating technique. The XRD results showed the preferential c-axis orientation of the crystallites and the presence of the wurite phase of ZnO and it were suggested that the presence of Ga might be changed the d-spacing of ZnO to formation the Ga-doped zinc oxide. The effects of Ga amount on the conductivity and transparency were studied. The electrical resistivity for the GZO film doped 2 at% of Ga could be lowered to be 7.510-3Ω-cm with the calcination temperature was 550°C and hydrogen treatment was conducted in the Ar/H2 (97/3) atmosphere at 500°C. In addition, the optical transmittances of GZO thin films were higher than 90% in visible wavelength region. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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