Pseudomorphic HEMT manufacturing technology for multifunctional Ka-band MMIC applications
| Autor: | S.X. Bar, A. Kurdoghlian, W. Yau, Z. Bardai, M. Gawronski, C.S. Wu, H. Kanber, C. Pao, C. Seashore, M. Hu, D. Bosch |
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| Rok vydání: | 1995 |
| Předmět: |
Power-added efficiency
Engineering Radiation business.industry Amplifier Electrical engineering Integrated circuit design High-electron-mobility transistor Condensed Matter Physics Noise figure Ka band Electrical and Electronic Engineering business Common gate Monolithic microwave integrated circuit |
| Zdroj: | IEEE Transactions on Microwave Theory and Techniques. 43:257-266 |
| ISSN: | 0018-9480 |
| DOI: | 10.1109/22.348082 |
| Popis: | We have demonstrated very good performance, high yield Ka-band multifunctional MMIC results using our recently developed 0.25-/spl mu/m gate length pseudomorphic HEMT (PHEMT) manufacturing technology. Four types of MMIC transceiver components-low noise amplifiers, power amplifiers, mixers, and voltage controlled oscillators-were processed on the same PHEMT wafer, and all were fabricated using a common gate recess process. High performance and high producibility for all four MMIC components was achieved through the optimization of the device epitaxial structure, a process with wide margins for critical process steps and circuit designs that allow for anticipated process variations, resulting in significant performance margins. We obtained excellent results for the Ka-band power amplifier: greater than 26 dBm output power at center frequency with 4.0% standard deviation over the 3-in. wafer, 2-GHz bandwidth, greater than 20 pet-cent power-added efficiency, over 8 dB associated gain, and over 10 dB linear gain. The best performance for the Ka-band LNA was over 17 dB gain and 3.5 dB noise figure at Ka-band. In this paper, we report our device, process, and circuit approach to achieve the state-of-the-art performance and producibility of our MMIC chips. > |
| Databáze: | OpenAIRE |
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