Predictive model for the temporal evolution of the shape of GaAs nanowires
| Autor: | Hanno Küpers, Lutz Geelhaar, Ryan B. Lewis |
|---|---|
| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Materials science Condensed matter physics Nanowire Physics::Optics Tapering 02 engineering and technology Large range Condensed Matter::Mesoscopic Systems and Quantum Hall Effect 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Inorganic Chemistry Condensed Matter::Materials Science 0103 physical sciences Materials Chemistry Range (statistics) Diffusion (business) 0210 nano-technology Molecular beam epitaxy Sign (mathematics) |
| Zdroj: | Journal of Crystal Growth. 531:125320 |
| ISSN: | 0022-0248 |
| DOI: | 10.1016/j.jcrysgro.2019.125320 |
| Popis: | We study the evolution of the shape (degree and sign of tapering) of Ga-assisted GaAs nanowires in molecular beam epitaxy. Here, we extend our previously published model for the diameter evolution in order to predict the nanowire shape over a large range of growth parameters. We use experimental data to connect parameters of different parts of the model. The predictive model reveals that an untapered nanowire shape can only be obtained for certain sets of diameter and length. The diffusion length of Ga atoms is found to be a determining parameter and by varying it the range of obtainable nanowire shapes may be modified. |
| Databáze: | OpenAIRE |
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