CMOS and interconnect reliability gate dielectric breakdown - modeling and mechanism

Autor:	P. Nicollian, K. Eriguchi
Rok vydání:	2006
Předmět:	Interconnection Reliability (semiconductor) Materials science Dielectric strength CMOS business.industry Gate dielectric Semiconductor device modeling Electronic engineering Electrical breakdown Optoelectronics Time-dependent gate oxide breakdown business
Zdroj:	IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..
DOI:	10.1109/iedm.2005.1609358
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::0851cd68e3f846af68153ab344282c5e https://doi.org/10.1109/iedm.2005.1609358 Zobrazit plný text záznamu