Trivalued Memory Circuit Using Metal-Oxide-Semiconductor Field-Effect Transistor Bipolar-Junction-Transistor Negative-Differential-Resistance Circuits Fabricated by Standard SiGe Process
| Autor: | Kwang-Jow Gan, Cher-Shiung Tsai, Yaw-Hwang Chen, Chun-Ming Wen, Dong-Shong Liang |
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| Rok vydání: | 2006 |
| Předmět: |
Memory circuits
Materials science Physics and Astronomy (miscellaneous) business.industry Bipolar junction transistor Transistor General Engineering Process (computing) General Physics and Astronomy Hardware_PERFORMANCEANDRELIABILITY law.invention Oxide semiconductor law Hardware_INTEGRATEDCIRCUITS Optoelectronics Field-effect transistor Resistor business Hardware_LOGICDESIGN Electronic circuit |
| Zdroj: | Japanese Journal of Applied Physics. 45:L977-L979 |
| ISSN: | 0021-4922 |
| DOI: | 10.1143/jjap.45.l977 |
| Popis: | A trivalued memory circuit based on two cascoded metal–oxide–semiconductor field-effect transistor bipolar-junction-transistor negative-differential-resistance (MOS-BJT-NDR) devices is investigated. The MOS-BJT-NDR device is made of MOS and BJT devices, but it can show the NDR current–voltage characteristic by suitably arranging the MOS parameters. We demonstrate a trivalued memory circuit using the two-peak MOS-BJT-NDR circuit as the driver and a resistor as the load. The MOS-BJT-NDR devices and memory circuits are fabricated by the standard 0.35 µm SiGe process. |
| Databáze: | OpenAIRE |
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