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Oscillation processes in V-shaped-gate GaAs MESFETs with the effective channel length 30 nm is discussed. The transistors were made by electron lithography and anisotropic etching to shape the gate. The analytic transit time of electrons along the channel was found to be less than 0.1 ps. The oscillation frequency varied from 30 to 37 GHz. It is shown that a decrease in the gate–source capacitance affects the oscillating signal only slightly. Unlike Gunn diodes, neutron irradiation has an insignificant effect on the signal up to fluences of 1015 cm–2. The exposure to IR radiation may change the signal amplitude twofold, with the oscillation frequency being changed by less than 0.1%. |
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