Investigation of defect on copper bond pad surface in copper/low k process integration
| Autor: | Y.J. Su, B. Yu, P.D. Foo, Y.S. Zheng |
|---|---|
| Rok vydání: | 2003 |
| Předmět: |
Copper oxide
Wire bonding Materials science Plasma etching Passivation Metallurgy Contact resistance Copper interconnect chemistry.chemical_element Condensed Matter Physics Copper Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry.chemical_compound chemistry Copper plating Electrical and Electronic Engineering Safety Risk Reliability and Quality |
| Zdroj: | Microelectronics Reliability. 43:1311-1316 |
| ISSN: | 0026-2714 |
| DOI: | 10.1016/s0026-2714(03)00134-3 |
| Popis: | In this work, inspection tools and surface analysis instruments were used to inspect and to analyze the defects at copper bond pads fabricated with copper/low k dual damascene deep submicron interconnect process integration. The defects at level are believed to be responsible for metal peeling at the Ta + Al and copper interface observed during chip wire bonding operation. The analysis results of the trace defects’ chemical composition show that the trace defects are the remainder of dielectric materials of passivation layer that is deposited on the top of the chip for protection. Copper oxide is also found to be present at the copper bond pads surface. A clear copper bond pad surface could be obtained using optimized dielectric pad window opening plasma etching conditions with suitable level plasma etching power and some overetch, improved photoresist stripping with oxygen and wet clean recipe with some chemicals. A clear copper bond pad surface will contribute to obtainment higher adhesion and lower contact resistance at Ta + Al and copper pad interface. |
| Databáze: | OpenAIRE |
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