Communication through stacked silicon circuitry using integrated thin film InP-based emitters and detectors
| Autor: | Martin A. Brooke, B. Buchanan, S.T. Wilkinson, C. Camperi-Ginestet, Nan Marie Jokerst |
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| Rok vydání: | 1995 |
| Předmět: |
Materials science
Silicon Physics::Instrumentation and Detectors Physics::Optics chemistry.chemical_element Hardware_PERFORMANCEANDRELIABILITY Integrated circuit Driver circuit law.invention Computer Science::Hardware Architecture Computer Science::Emerging Technologies Hardware_GENERAL law Hardware_INTEGRATEDCIRCUITS Electrical and Electronic Engineering Common emitter Electronic circuit business.industry Amplifier Photonic integrated circuit Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials CMOS chemistry Optoelectronics business Hardware_LOGICDESIGN |
| Zdroj: | IEEE Photonics Technology Letters. 7:1028-1030 |
| ISSN: | 1941-0174 1041-1135 |
| DOI: | 10.1109/68.414691 |
| Popis: | To demonstrate optical communication through stacked silicon circuitry, thin film InGaAsP-based emitters and photodetectors have been bonded directly onto silicon circuitry. These optoelectronic devices operate at a wavelength to which silicon is transparent. The thin film emitters and detectors were integrated onto a MOSIS foundry silicon CMOS integrated circuit which contained driver and amplifier circuits. Bidirectional vertical optical communication between two layers of circuitry was demonstrated by stacking the layers, exciting the emitter driver circuit on one layer with an electrical signal, and measuring the output electrical signal from the detector amplifier located on the other circuit in the vertical stack. > |
| Databáze: | OpenAIRE |
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