Entirely Crack-Free Ultraviolet GaN/AlGaN Laser Diodes Grown on 2-in. Sapphire Substrate

Autor:	Hirofumi Kan, Masakazu Kuwabara, Harumasa Yoshida, Hiroshi Amano, Yasufumi Takagi
Rok vydání:	2007
Předmět:	Materials science Physics and Astronomy (miscellaneous) Laser diode business.industry General Engineering General Physics and Astronomy medicine.disease_cause Epitaxy Laser law.invention Optics law medicine Sapphire substrate Optoelectronics Photonics business Layer (electronics) Ultraviolet Diode
Zdroj:	Japanese Journal of Applied Physics. 46:5782-5784
ISSN:	1347-4065 0021-4922
DOI:	10.1143/jjap.46.5782
Popis:	We have succeeded in fabricating ultraviolet (UV) GaN/AlGaN laser diodes without any crack generation on a whole 2-in. sapphire substrate using a hetero-facet-controlled epitaxial lateral overgrowth (hetero-FACELO) method. The UV laser diodes lased in the peak wavelength range from 355.4 to 361.6 nm under a pulsed current operation at room temperature. We have also investigated both parameters, material gain and optical-internal loss in GaN/AlGaN multiple quantum wells (MQWs). The actual threshold currents of the UV laser diodes were practically in agreement with the estimated threshold current from these parameters. This layer structure is one of the solutions for the purpose of high-yield production of UV photonic devices.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::0833a25406dad01a90f14e4fe3254a55 https://doi.org/10.1143/jjap.46.5782 Zobrazit plný text záznamu