Interfacial properties of InAlAs/InGaAs HIGFETs and MIS capacitors
| Autor: | P. Z. Lee, L G Meiners, H H Wieder, C Fan |
|---|---|
| Rok vydání: | 1990 |
| Předmět: |
Materials science
Band gap business.industry Transistor Heterojunction Condensed Matter Physics Electronic Optical and Magnetic Materials law.invention Capacitor law State density Materials Chemistry Optoelectronics Electrical and Electronic Engineering Drain current business Voltage Molecular beam epitaxy |
| Zdroj: | Semiconductor Science and Technology. 5:716-720 |
| ISSN: | 1361-6641 0268-1242 |
| DOI: | 10.1088/0268-1242/5/7/014 |
| Popis: | The interfacial properties and characteristics of In0.52Al0.48As/In0.53Ga0.47As MIS capacitors grown on InP substrates by molecular beam epitaxy and of prototype enhancement-mode heterojunction insulated gate field-effect transistors (HIGFETS) were investigated experimentally. The interface state density distribution within the fundamental band gap is less than 1012 cm-2 eV-1 and the DC transistor characteristics are stable, with drain current drift of 2+or-1% for gate voltages between -0.2 and 0.2 V over a time period of 700 s. |
| Databáze: | OpenAIRE |
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