V-band GaAs MMIC low-noise and power amplifiers
| Autor: | H.C. Huang, G.M. Hegazi, F.R. Phelleps, T.T. Lee, Hing-Loi Hung, J. L. Singer |
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| Rok vydání: | 1988 |
| Předmět: | |
| Zdroj: | IEEE Transactions on Microwave Theory and Techniques. 36:1966-1975 |
| ISSN: | 1557-9670 0018-9480 |
| DOI: | 10.1109/22.17441 |
| Popis: | GaAs MESFET amplifiers with on-chip DC-blocking and bias networks which were fabricated from both VPE and MBE materials, are reported. The low-noise designs resulted in a single-stage MMIC, low-noise amplifier achieving a 6.5-dB noise figure and a 4.1-dB gain at 59 GHz, as well as a cascaded six-stage amplifier exhibiting an 8-dB minimum noise figure and a 30-dB gain from 56.2 to 60 GHz. The single-stage power amplifier provides over 4.5 dB of gain from 57 to 60.5 GHz, with a maximum output power of 95 mW and a corresponding power-added efficiency at 11% at 58 GHz. Maximum power-added efficiency of 15.3% at 73 mW was also obtained. A cascaded four-stage amplifier demonstrated stable operation, achieving 17 dB of gain and 85 mW of output power. A two-stage balanced amplifier provided 136 mW of output power and 7.5 dB of linear gain from 56.6 to 61.5 GHz. > |
| Databáze: | OpenAIRE |
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